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| BZX84C2V7-BZX84C51 Vishay Telefunken 350 mW Surface Mount Zener Diodes Features D D D D Planar die construction 350 mW Power dissipation Zener voltages from 2.7V - 51V Ideally suited for automated assembly processes 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Zener current (see figures 1-3 below) Junction and storage temperature range Test Conditions on ceramic substrate 10mm x 8mm x 0.7mm Symbol Pd Value 350 Unit mW Tj=Tstg -55...+150 C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on ceramic substrate 10mm x 8mm x 0.7mm Symbol RthJA Value 420 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward Voltage Test Conditions IF=10 mA Type Symbol VF Min Typ Max 0.9 Unit V Document Number 85606 Rev. 1, 01-Apr-99 www.vishay.de * FaxBack +1-408-970-5600 1 (5) BZX84C2V7-BZX84C51 Vishay Telefunken Type BZX84C... 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 Marking KZC KZD KZE KZF KZG KZH KZ1 KZ2 KZ3 KZ4 KZ5 KZ6 KZ7 KZ8 KZ9 KY1 KY2 KY3 KY4 KY5 KY6 KY7 KY8 KY9 KYA KYB KYC KYD KYE KYF KYG KYH VZ V @ IZT 2.5 to 2.9 2.8 to 3.2 3.1 to 3.5 3.4 to 3.8 3.7 to 4.1 4.0 to 4.6 4.4 to 5.0 4.8 to 5.4 5.2 to 6.0 5.8 to 6.6 6.4 to 7.2 7.0 to 7.9 7.7 to 8.7 8.5 to 9.6 9.4 to 10.6 10.4 to 11.6 11.4 to 12.7 12.4 to 14.1 13.8 to 15.6 15.3 to 17.1 16.8 to 19.1 18.8 to 21.2 20.8 to 23.3 22.8 to 25.6 25.1 to 28.9 28 to 32 31 to 35 34 to 38 37 to 41 40 to 46 44 to 50 48 to 54 ZZT W @ IZT mA 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 ZZK W @ IZK mA 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 TC %/C -0.065 -0.060 -0.055 -0.055 -0.050 -0.035 -0.015 +0.005 +0.020 +0.030 +0.045 +0.050 +0.055 +0.065 +0.065 +0.070 +0.075 +0.080 +0.080 +0.090 +0.090 +0.090 +0.090 +0.090 +0.090 +0.090 +0.090 +0.090 +0.110 +0.110 +0.110 +0.110 mA 20 10 5.0 5.0 3.0 3.0 4.0 2.0 1.0 3.0 2.0 1.0 0.7 0.5 0.2 0.1 0.1 0.1 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 IR @ VR V 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 2.0 4.0 4.0 5.0 5.0 6.0 7.0 8.0 8.0 8.0 0.7VZnom 0.7VZnom 0.7VZnom 0.7VZnom 0.7VZnom 0.7VZnom 0.7VZnom 0.7VZnom 0.7VZnom 0.7VZnom 0.7VZnom 0.7VZnom 0.7VZnom 0.7VZnom 100 100 95 95 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 80 80 80 90 130 150 170 180 600 600 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 300 300 325 350 350 375 375 400 1) Device mounted on ceramic substrate 8mmx10mmx0.7mm 2) VZ measured at IZT using a pulse test. IZ pulse width = 5 ms. Standard voltage tolerance is 5%. www.vishay.de * FaxBack +1-408-970-5600 2 (5) Document Number 85606 Rev. 1, 01-Apr-99 BZX84C2V7-BZX84C51 Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified) Tj=25C C2V7 C3V9 C3V3 C4V7 C5V6 C6V8 Ptot - Total Power Dissipation ( mW ) 50 500 See Note 1 40 C8V2 400 I Z - Z-Current ( mA ) 30 300 20 200 10 Test Current Iz 5.0mA 100 0 0 0 15251 1 2 4567 VZ - Z-Voltage ( V ) 3 8 9 10 15254 0 100 200 Tamb - Ambient Temperature ( C ) Figure 1. Z-Current vs. Z-Voltage Figure 4. Total Power Dissipation vs. Ambient Temperature 1000 C D - Diode Capacitance ( pF ) Tj=25C 30 Tj=25C C10 C12 VR = 1V VR = 2V I Z - Z-Current ( mA ) 20 C15 C18 Test Current Iz 2.0mA C22 100 VR = 1V 10 Test Current Iz 5.0mA C27 C33 C36 VR = 2V 0 0 15252 10 10 20 30 VZ - Z-Voltage ( V ) 40 15255 1 10 VZ - Z-Voltage ( V ) 100 Figure 2. Z-Current vs. Z-Voltage 10 Tj=25C C39 C43 C47 C51 Figure 5. Diode Capacitance vs. Z-Voltage 8 I Z - Z-Current ( mA ) 6 4 Test Current Iz 2.0mA 2 0 0 15253 10 20 30 40 50 60 70 80 90 100 VZ - Z-Voltage ( V ) Figure 3. Z-Current vs. Z-Voltage Document Number 85606 Rev. 1, 01-Apr-99 www.vishay.de * FaxBack +1-408-970-5600 3 (5) BZX84C2V7-BZX84C51 Vishay Telefunken Dimensions in mm top view 14370 Case: SOT23, molded plastic Mounting position: any Approx. weight: 0.008 grams www.vishay.de * FaxBack +1-408-970-5600 4 (5) Document Number 85606 Rev. 1, 01-Apr-99 BZX84C2V7-BZX84C51 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 85606 Rev. 1, 01-Apr-99 www.vishay.de * FaxBack +1-408-970-5600 5 (5) |
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